Mn₃As₃Rh₃ is an intermetallic semiconductor compound combining manganese, arsenic, and rhodium in a 1:1:1 stoichiometric ratio. This is a research-phase material primarily investigated for its electronic and magnetic properties rather than established in high-volume industrial production. The material belongs to the family of ternary intermetallics and shows potential for applications requiring semiconducting behavior combined with magnetic functionality, though its development status and synthesis complexity limit current engineering adoption.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 152.7 | GPa | — | ||
Shear Modulus(G) | 36.90 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00490 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1510 | eV/atom | — |