Mn3 Ag1 N1

semiconductor

· Mn3 Ag1 N1

Mn₃AgN is an antiperovskite semiconductor compound combining manganese, silver, and nitrogen in a 3:1:1 stoichiometry. This is a research-phase material studied for its potential in spintronic and magnetoelectric applications, belonging to the broader family of antiperovskite nitrides that exhibit interesting magnetic and electronic properties not found in conventional semiconductors. While not yet widely deployed in production, materials in this class are of interest to researchers exploring next-generation devices that exploit the coupling between magnetism and charge transport.

spintronics researchmagnetoelectric devicesmagnetic sensor developmentthin-film heterostructuresquantum materials exploration

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	21,426.9	ksi	—
Shear Modulus(G)	11,898.9	ksi	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.01110	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.04400	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn3 Ag1 N1

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control