Mn₂ZnN₂ is a ternary nitride semiconductor compound combining manganese, zinc, and nitrogen elements. This material belongs to the family of transition metal nitrides and is primarily of research interest for wide-bandgap semiconductor applications, particularly in optoelectronic and high-temperature device development. The combination of manganese and zinc in a nitride matrix offers potential for tunable electronic properties and ferrimagnetic behavior, making it a candidate material for next-generation semiconductors and spintronic devices, though practical applications remain largely in the experimental phase.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,306.1 | ksi | — | ||
Shear Modulus(G) | 7,514 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00120 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.3270 | eV/atom | — |