Mn₂O₃F is a mixed manganese oxide-fluoride semiconductor compound, representing an emerging class of functional oxides with anion doping. This material is primarily of research interest rather than established commercial production, investigated for its potential to modify electronic and ionic transport properties compared to conventional manganese oxides. Its applications are being explored in energy storage, catalysis, and solid-state electronics where the fluorine substitution can tune electronic band structure and oxygen vacancy behavior.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 192.2 | GPa | — | ||
Shear Modulus(G) | 84.71 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00380 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.960 | eV/atom | — |