Mn₂O₂F₂ is a manganese oxide fluoride compound that functions as a semiconductor, combining transition metal oxide chemistry with fluorine doping to modify electronic properties. This is primarily a research material studied for potential applications in energy storage, catalysis, and advanced electronics, where fluorine substitution can enhance ionic conductivity and electrochemical performance compared to undoped manganese oxides. The material exemplifies a broader class of anionic-doped metal oxides being explored to engineer band gaps and ion transport properties for next-generation devices.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,706.2 | ksi | — | ||
Shear Modulus(G) | 7,126.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000800 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.058 | eV/atom | — |