Mn2 Ni2 Ge2

semiconductor

· Mn2 Ni2 Ge2

Mn₂Ni₂Ge₂ is a quaternary intermetallic semiconductor compound combining manganese, nickel, and germanium in a stoichiometric ratio. This material belongs to the class of Heusler-type alloys and related intermetallics, which are primarily investigated in research contexts for spintronic and magnetic semiconductor applications rather than established high-volume industrial production. The compound is notable for potential use in spin-dependent electron transport and magnetoelectronic devices, where the interplay between magnetic ordering and electronic band structure can be engineered for novel functionality.

spintronics researchmagnetic semiconductorsthermoelectric developmentquantum materialsexperimental device prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	134.6	GPa	—
Shear Modulus(G)	58.47	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.00330	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-0.1560	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mn2 Ni2 Ge2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control