Mn₂Nb₆S₁₂ is a ternary layered chalcogenide semiconductor composed of manganese, niobium, and sulfur. This material belongs to the family of transition metal chalcogenides, which are of significant research interest for their tunable electronic and optical properties, particularly in two-dimensional and layered crystal structures. As an experimental compound, Mn₂Nb₆S₁₂ is primarily investigated in academic and industrial research settings for its potential in next-generation electronic and photonic devices, where the combination of magnetic (Mn) and refractory (Nb) elements offers opportunities for engineering materials with coupled magnetic-electronic properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,222.7 | ksi | — | ||
Shear Modulus(G) | 8,917.9 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.151 | eV/atom | — |