Mn₂N₂ is an experimental manganese nitride semiconductor compound being investigated in materials research for next-generation electronic and magnetic applications. While not yet established in mainstream industrial production, manganese nitrides are of scientific interest for their potential in spintronic devices, magnetic materials, and semiconductor applications due to the magnetic properties of manganese combined with nitrogen's effects on electronic structure. This material represents an emerging area in transition metal nitride research where composition and crystal structure engineering aim to develop alternatives to conventional semiconductors with enhanced functional properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 42,267.2 | ksi | — | ||
Shear Modulus(G) | 12,846.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01430 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.1450 | eV/atom | — |