Mn₂As₂Ba₁ is an experimental intermetallic semiconductor compound combining manganese, arsenic, and barium elements. This material belongs to the broader family of ternary semiconductors and Heusler-type compounds, which are primarily of research interest rather than established commercial use. The combination of magnetic (Mn) and semiconducting properties makes it potentially relevant for spintronic applications, though development remains largely in the laboratory phase.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 10,753.7 | ksi | — | ||
Shear Modulus(G) | 6,176.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01080 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5580 | eV/atom | — |