Mn₂Al₂F₁₀ is a manganese aluminum fluoride compound classified as a semiconductor, representing an inorganic fluoride-based material system. This compound belongs to an emerging research category of metal fluorides with potential applications in energy storage, solid-state ionic conduction, and advanced electronic devices where fluoride frameworks offer chemical stability and tunable electronic properties. Limited commercial deployment exists; most applications remain in laboratory development phases exploring superior ionic mobility, thermal stability, and electrochemical performance compared to conventional oxide-based semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 94.40 | GPa | — | ||
Shear Modulus(G) | 41.42 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02870 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -3.171 | eV/atom | — |