Mn₂Ag₂O₄ is a mixed-valence oxide semiconductor combining manganese and silver in a spinel-related structure. This material remains primarily in the research phase, investigated for its potential in electronic and catalytic applications due to the synergistic properties arising from manganese-silver interactions. Interest centers on its use as a candidate material for catalysis, sensing, and potentially battery or photocatalytic applications where the dual transition-metal composition offers advantages over single-metal oxides.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 126.0 | GPa | — | ||
Shear Modulus(G) | 32.66 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.3720 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.211 | eV/atom | — |