Mn1Zn1O3 is a mixed-valence oxide semiconductor composed of manganese, zinc, and oxygen in a 1:1:3 stoichiometry. This compound belongs to the ternary oxide family and is primarily of research interest for its potential in functional ceramics, particularly for applications requiring specific magnetic or electronic properties at the interface between magnetic and semiconducting materials. The Mn-Zn-O system is notable in varistors and gas-sensing devices, where manganese-zinc oxides have been widely studied as alternatives to more conventional dopant systems, offering tunable electrical characteristics and potential cost advantages in bulk ceramic applications.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.215 | eV/atom | — |