MnTe is a binary semiconductor compound belonging to the II-VI semiconductor family, consisting of manganese and tellurium in a 1:1 stoichiometric ratio. Primarily investigated as a research material rather than a commercial product, MnTe is studied for its potential in spintronic devices, magnetic semiconductors, and dilute magnetic semiconductor (DMS) applications where the interplay between semiconducting and magnetic properties is exploited. Engineers and researchers consider MnTe when designing advanced optoelectronic or spin-dependent transport devices, though practical adoption remains limited compared to mature alternatives like GaAs or CdTe due to material stability and processing challenges.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 39.80 | GPa | — | ||
Shear Modulus(G) | 12.06 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000700 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.05600 | eV/atom | — |