Mn₁Sn₁Au₁ is an intermetallic compound semiconductor combining manganese, tin, and gold in a 1:1:1 stoichiometric ratio. This is primarily a research-phase material investigated for potential thermoelectric and spintronic applications, where the combination of magnetic (Mn) and conducting (Au, Sn) elements may enable novel electronic transport properties. The material belongs to the broader class of ternary intermetallic semiconductors, which are of academic and industrial interest for next-generation energy conversion and quantum device platforms, though practical device implementations remain limited.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 80.20 | GPa | — | ||
Shear Modulus(G) | -2.940 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01000 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.03700 | eV/atom | — |