Manganese disulfide (MnS₂) is a transition metal dichalcogenide semiconductor compound belonging to the layered materials family, structurally related to naturally occurring minerals. This material is primarily investigated in research contexts for optoelectronic and energy storage applications, where its semiconducting properties and potential for two-dimensional forms make it relevant for next-generation devices; it remains largely experimental rather than commercially established, but represents a promising candidate in the broader exploration of earth-abundant alternatives to conventional semiconductors like silicon and III-V compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.79 | GPa | — | ||
Shear Modulus(G) | 8.813 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5950 | eV/atom | — |