Mn₁Ni₂Sb₁ is a ternary intermetallic semiconductor compound combining manganese, nickel, and antimony in a defined stoichiometric ratio. This material belongs to the family of half-Heusler and full-Heusler compounds, which are of significant research interest for thermoelectric and spintronic applications. While primarily investigated in academic and laboratory settings rather than established high-volume production, this composition is notable for its potential to exhibit favorable electronic and thermal transport properties, making it a candidate for next-generation energy conversion and quantum devices where tailored band structure and magnetic interactions are valuable.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 20,020 | ksi | — | ||
Shear Modulus(G) | 2,857.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02250 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.03600 | eV/atom | — |