Mn1 Ni2 In1
semiconductorMn₁Ni₂In₁ is a ternary intermetallic semiconductor compound combining manganese, nickel, and indium in a defined stoichiometric ratio. This material belongs to the family of Heusler alloys and related intermetallic semiconductors, which are of significant interest in solid-state physics research for their potential spin-dependent electronic properties and thermoelectric applications. While primarily in the research phase rather than established industrial production, this composition is notable for investigating half-metallic or spin-gapless semiconductor behavior, which could enable advances in spintronics, magnetoresistive devices, and high-efficiency thermoelectric energy conversion if performance targets are met.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 136.8 | GPa | — | ||
Shear Modulus(G) | 46.92 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01850 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.04500 | eV/atom | — |