Mn₁N₁ is a manganese nitride semiconductor compound that belongs to the family of transition metal nitrides, which are of significant research interest for their potential electronic and magnetic properties. This material is primarily investigated in academic and exploratory research contexts for applications requiring semiconductor behavior combined with the chemical stability and hardness characteristic of nitride compounds. Manganese nitrides are being studied for next-generation electronics, spintronics, and photovoltaic applications where their tunable band structure and potential ferromagnetic properties could offer advantages over conventional semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 39,305.2 | ksi | — | ||
Shear Modulus(G) | 4,594.8 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01395 range 0.00140–0.02650median of 2 measurements | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.05850 range -0.4400–0.3230median of 2 measurements | eV/atom | — |