MnGaIr₂ is an intermetallic compound combining manganese, gallium, and iridium in a defined stoichiometric ratio, classified as a semiconductor. This is a research-phase material rather than a commercial alloy, studied primarily for its potential in spintronics, magnetism, and high-performance electronic applications where the interplay between transition metals (Mn, Ir) and a p-block element (Ga) creates unique electronic properties. The material belongs to the Heusler alloy family and related intermetallic systems, which are of significant interest for next-generation magnetic and quantum devices where conventional semiconductors are insufficient.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 229.4 | GPa | — | ||
Shear Modulus(G) | 94.44 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03290 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2960 | eV/atom | — |