Mn₁Cu₂Si₁Te₄ is a quaternary semiconductor compound combining manganese, copper, silicon, and tellurium elements. This material belongs to the family of complex chalcogenides and is primarily investigated in research contexts for thermoelectric and optoelectronic applications, where the combination of elements is engineered to optimize band gap and carrier transport properties.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.02030 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.04400 | eV/atom | — |