Mn₁Cu₂In₁ is a ternary intermetallic semiconductor compound combining manganese, copper, and indium in a fixed stoichiometric ratio. This material belongs to the family of Heusler alloys and related intermetallic semiconductors, which are of significant research interest for thermoelectric, spintronic, and optoelectronic applications. The compound is primarily investigated in academic and exploratory industrial settings rather than established high-volume manufacturing, with potential applications in energy conversion and advanced electronic devices where the unique electronic structure of ternary intermetallics offers advantages over binary semiconductors.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 104.6 | GPa | — | ||
Shear Modulus(G) | 40.98 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00450 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 0.1310 | eV/atom | — |