Mn1 Al1 Os2
semiconductorMn₁Al₁Os₂ is an intermetallic compound combining manganese, aluminum, and osmium—a rare-earth transition metal alloy that belongs to the family of high-density, refractory metallic systems. This material is primarily of research interest rather than established industrial use; compounds in this family are being explored for applications requiring extreme temperature stability, corrosion resistance, and high density, particularly in aerospace and high-energy physics contexts. The osmium content makes this system notably expensive and density-rich compared to conventional aerospace alloys, positioning it as a candidate for specialized, performance-critical applications where weight and thermal limits are less restrictive than operating environment demands.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.06280 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.2380 | eV/atom | — |