MgUO3
semiconductorMgUO₃ is an experimental mixed-metal oxide semiconductor combining magnesium and uranium oxides; it belongs to the family of complex ternary oxides under investigation for nuclear fuel applications and solid-state device research. This compound is primarily of academic and research interest rather than established commercial use, with potential applications in nuclear materials science where uranium-bearing ceramics are studied for their thermal, radiation, and electrochemical properties. Engineers considering this material would be working in specialized nuclear fuel development, materials characterization for extreme environments, or fundamental semiconductor research rather than conventional industrial manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |