MgUO3

semiconductor

· MgUO3

MgUO₃ is an experimental mixed-metal oxide semiconductor combining magnesium and uranium oxides; it belongs to the family of complex ternary oxides under investigation for nuclear fuel applications and solid-state device research. This compound is primarily of academic and research interest rather than established commercial use, with potential applications in nuclear materials science where uranium-bearing ceramics are studied for their thermal, radiation, and electrochemical properties. Engineers considering this material would be working in specialized nuclear fuel development, materials characterization for extreme environments, or fundamental semiconductor research rather than conventional industrial manufacturing.

nuclear fuel researchradiation-resistant ceramicshigh-temperature oxide materialsexperimental semiconductorsmaterials characterization studies

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.986	eV	—
Magnetic Moment(μB)	0.4000	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-3.256	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgUO3

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control