MgSiP₂ is a ternary ceramic compound combining magnesium, silicon, and phosphorus—a composition that places it in the broader family of phosphide ceramics with potential for structural or functional applications. This material appears primarily in research and development contexts rather than established industrial production; compounds in this family are of interest for their mechanical stiffness and potential thermal or electrical properties that could be tailored for specialized engineering environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 71.62 | GPa | DFT | ||
| ↳ | 73.73 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2900 | - | DFT · OptB88vdW | ||
Shear Modulus(G)2 entries | 34.03 | GPa | DFT | ||
| ↳ | 38.58 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 2.235 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.458 | eV | DFT · OptB88vdW | ||
| ↳ | 2.236 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)2 entries | 11.35 | - | DFT · OptB88vdW | ||
| ↳ | 10.17 range 8.903–11.43median of 2 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 9.166 | - | DFT · OptB88vdW | ||
| ↳ | 7.074 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.3667 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.7833 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.1234 | C/m² | DFT · PBE | ||
| ↳ | 0.4911 | C/m² | DFT · OptB88vdW | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.000930 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00162 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -114.5 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 275.5 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 17.93 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4900 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data