MgInSe is a ternary II-VI semiconductor ceramic compound composed of magnesium, indium, and selenium. This material belongs to the family of wide-bandgap semiconductors and is primarily investigated in research settings for optoelectronic and photonic applications where its electronic and optical properties could offer advantages over binary alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,963.9 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.4600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,131.3 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1732 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.8167 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.09140 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data