MgInO2F
semiconductor· MgInO2F
MgInO₂F is an experimental ternary oxide-fluoride semiconductor compound combining magnesium, indium, oxygen, and fluorine. This material belongs to the family of wide-bandgap semiconductors and is primarily of research interest for next-generation optoelectronic and photonic applications where fluorine doping or mixed-anion strategies are explored to engineer electronic properties and reduce defect states.
wide-bandgap semiconductorsoptoelectronic researchUV photodetectorstransparent conducting oxides (experimental)photocatalysismaterials science research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.