MgInO2F

semiconductor

· MgInO2F

MgInO₂F is an experimental ternary oxide-fluoride semiconductor compound combining magnesium, indium, oxygen, and fluorine. This material belongs to the family of wide-bandgap semiconductors and is primarily of research interest for next-generation optoelectronic and photonic applications where fluorine doping or mixed-anion strategies are explored to engineer electronic properties and reduce defect states.

wide-bandgap semiconductorsoptoelectronic researchUV photodetectorstransparent conducting oxides (experimental)photocatalysismaterials science research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.700	eV	—
Magnetic Moment(μB)	-3.319e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.7800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgInO2F

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control