MgInN3 is a ternary ceramic nitride compound combining magnesium, indium, and nitrogen. This material remains primarily in the research and development phase, with investigations focused on its potential as a wide-bandgap semiconductor or optoelectronic material within the nitride family. While not yet established in high-volume industrial production, compounds in this class are of interest for next-generation power electronics, ultraviolet (UV) optoelectronics, and high-temperature applications where conventional semiconductors reach their limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.03226 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.980 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data