MgGeAs2 — Properties & Data | MatWorld

MgGeAs2

ceramic

· JVASP-36582· MgGeAs2

MgGeAs₂ is a ternary semiconductor ceramic compound belonging to the chalcopyrite family, combining magnesium, germanium, and arsenic into a crystalline structure. This material is primarily of research and developmental interest for optoelectronic and photovoltaic applications where direct bandgap semiconductors are needed, particularly in the infrared spectrum. While not yet widely commercialized compared to established semiconductors like GaAs or InP, MgGeAs₂ represents exploration into alternative material systems that could enable novel detectors, modulators, or solar cells in niche wavelength ranges.

infrared optoelectronicssemiconductor researchphotovoltaic developmentinfrared detectorsexperimental compound semiconductorsnonlinear optical devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	7,811.7	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2900	-	DFT · OptB88vdW
Shear Modulus(G)	4,001.6	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1460	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Filter by

Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	0.5540	eV	DFT · OptB88vdW
↳	1.650	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	17.93	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	14.23	-	DFT · OptB88vdW
↳	8.768	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.08667	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.5267	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.4909	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00157	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00243	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-118.9	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	240.2	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	30.15	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.02400	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.2976	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgGeAs2

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental