MgGaON₂ is an experimental ternary ceramic compound combining magnesium, gallium, oxygen, and nitrogen—a member of the oxynitride ceramic family being explored for wide-bandgap semiconductor and optoelectronic applications. Research into this material focuses on its potential for high-temperature stability, wide optical bandgap, and thermal/chemical robustness, positioning it as a candidate for next-generation power electronics, UV optoelectronics, and extreme-environment applications where conventional semiconductors fall short. As an early-stage research compound rather than a production material, MgGaON₂ remains primarily in academic development; its viability relative to established alternatives like GaN or AlN depends on ongoing optimization of synthesis routes and device integration.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | -0.00122 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.720 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data