MgBeO2S

semiconductor

· MgBeO2S

MgBeO2S is an experimental quaternary semiconductor compound combining magnesium, beryllium, oxygen, and sulfur elements. This material belongs to the mixed-anion semiconductor family and is primarily investigated in research contexts for optoelectronic and photonic device applications where wide bandgap semiconductors with tunable properties are sought. The combination of beryllium and magnesium oxides with sulfur anion doping represents an emerging strategy to engineer electronic properties for UV-visible light emission or detection, though industrial deployment remains limited and the material is not yet widely commercialized.

experimental optoelectronicsUV light emitters/detectorswide-bandgap semiconductorsphotonic research devicesmaterials engineering R&Dcompound semiconductor development

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.200	eV	—
Magnetic Moment(μB)	-0.0000240	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.060	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgBeO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control