MgAsP is a ternary III–V ceramic compound composed of magnesium, arsenic, and phosphorus, belonging to the family of wide-bandgap semiconductors and optoelectronic materials. This material is primarily investigated in research contexts for potential applications in high-energy-radiation environments and specialized optoelectronic devices, where its crystal structure and electronic properties may offer advantages over binary compounds like GaAs or GaN in specific niche applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 176.9 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | 287.2 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1270 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4762 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.01716 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data