MgAsN3

ceramic

· MgAsN3

MgAsN₃ is an experimental ternary nitride ceramic compound combining magnesium, arsenic, and nitrogen in a single-phase structure. This material remains largely in the research phase, investigated for its potential in wide-bandgap semiconductor and high-temperature ceramic applications where conventional nitrides may have limitations. The arsenic-containing nitride family is of interest for optoelectronic devices and advanced structural ceramics, though industrial adoption has been minimal compared to established nitrides like GaN and AlN.

wide-bandgap semiconductors (research)high-temperature structural ceramics (exploratory)optoelectronic devices (developmental)emerging nitride compounds

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

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Method

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	DFT · GLLB-SC
Magnetic Moment(μB)	0.4076	μB	DFT

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.780	eV/atom	DFT

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

MgAsN3 — Properties & Data | MatWorld

MgAsN3

Electrical Properties

Other Properties

Regulatory Screening

Environmental