Magnesium arsenide (MgAs) is a binary ceramic compound belonging to the III-V semiconductor family, formed from magnesium and arsenic. It is primarily investigated as a research material for optoelectronic and semiconductor device applications, though it remains less commercially developed than competing III-V compounds like GaAs or InAs. MgAs is notable for its potential in wide-bandgap semiconductor applications and has attracted academic interest for high-temperature electronics and photonic devices, though practical industrial adoption has been limited due to synthesis challenges, thermal stability concerns, and competition from more established III-V materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,958.2 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2600 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,611.4 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1374 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.2140 | eV | DFT · OptB88vdW | ||
| ↳ | 0.6310 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 16.33 | - | DFT · OptB88vdW | ||
| ↳ | 13.64 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 20.68 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.1435 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4495 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data