Magnesium arsenide (MgAs₂) is a III-V semiconductor ceramic compound combining a group II metal (magnesium) with a group V metalloid (arsenic). This material is primarily of research and specialized applications interest rather than a high-volume industrial commodity. MgAs₂ and related magnesium pnictide semiconductors are investigated for optoelectronic and photovoltaic devices, particularly in wide-bandgap semiconductor research, though practical deployment remains limited compared to more mature alternatives like GaAs or InP. Engineers considering this material should recognize it as an emerging compound with potential in niche high-energy physics detector applications and next-generation solar cell research, where its semiconducting properties and chemical stability may offer advantages in extreme or specialized operating conditions.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 53.58 | GPa | DFT · OptB88vdW | ||
Shear Modulus(G) | 14.89 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.993 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | DFT · OptB88vdW | ||
| ↳ | 0.000 | eV | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.3865 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.01410 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data