Mg₆B₂N₆ is a ternary ceramic semiconductor compound combining magnesium, boron, and nitrogen—a material family that bridges traditional boron nitride ceramics with magnesium-based compounds. This is a research-phase material with potential applications in wide-bandgap semiconductor devices and high-temperature thermal management, where its ceramic structure offers hardness and chemical stability alongside semiconducting properties. Interest in this compound stems from its potential to enable high-temperature electronics, neutron shielding, or advanced thermal dissipation systems, though it remains largely in experimental development with limited industrial production.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 15,246.7 | ksi | — | ||
Shear Modulus(G) | 6,145.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.597 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.079 | eV/atom | — |