Mg₆As₄O₁₆ is an inorganic semiconductor compound combining magnesium, arsenic, and oxygen in a mixed-valence oxide structure. This material belongs to the family of ternary arsenate semiconductors, which are primarily investigated in research contexts for optoelectronic and photonic applications rather than established industrial production. The arsenic oxide component makes this compound of particular interest for wide-bandgap semiconductor research, though practical engineering adoption remains limited; engineers would evaluate it primarily in specialized research environments or emerging device concepts where its semiconducting properties offer advantages over more conventional materials.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.897 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.165 | eV/atom | — |