Mg4 Ta2 Sn2 O12

semiconductor

· Mg4 Ta2 Sn2 O12

Mg₄Ta₂Sn₂O₁₂ is a complex ternary oxide semiconductor combining magnesium, tantalum, and tin in a layered perovskite-related structure. This is a research-phase compound studied for potential applications in electronic and photonic devices, where the combination of heavy transition metals (Ta, Sn) with alkaline earth elements (Mg) can enable tailored band gaps and dielectric properties. The material family is of interest in solid-state chemistry for exploring novel semiconducting oxides with potential use in optoelectronics, though it remains primarily in the experimental/characterization stage rather than established commercial production.

research optoelectronicswide band gap semiconductorsphotonic device developmentsolid-state chemistry explorationthin-film deposition researchelectronic material screening

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.02410	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-2.533	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Mg4 Ta2 Sn2 O12

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control