Mg₄Sn₈O₁₆ is an inorganic oxide semiconductor compound combining magnesium, tin, and oxygen in a defined stoichiometric ratio. This material belongs to the class of mixed-metal oxides and represents an experimental or emerging compound of interest in semiconductor research, particularly within the pyrochlore or related crystal structure families. Engineers would evaluate this material primarily for applications requiring wide bandgap semiconducting behavior, transparency, or catalytic properties, where the combined presence of Mg and Sn oxides may offer advantages over single-metal oxide alternatives in specific temperature or optical windows.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.214 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.835 | eV/atom | — |