Mg4Sn4O8 is an experimental magnesium tin oxide semiconductor compound, representing a mixed-metal oxide material system with potential applications in functional ceramics and electronic devices. This material belongs to the broader family of ternary oxides and is primarily of research interest rather than established commercial production, investigated for its semiconductor properties and potential use in optoelectronic or photocatalytic applications where magnesium and tin oxide constituents offer complementary functionality.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,452.6 | ksi | — | ||
Shear Modulus(G) | 3,192.7 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.923 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.072 | eV/atom | — |