Mg4Sn2O8 is an experimental oxide semiconductor compound combining magnesium, tin, and oxygen elements, belonging to the broader family of mixed-metal oxides under active materials research. While not yet established in mainstream industrial production, this material is of interest in semiconductor research contexts where tin oxide and magnesium oxide phases interact, potentially offering unique electronic or optoelectronic properties for next-generation device applications. The material represents the type of engineered ceramic composition that researchers explore for emerging technologies where conventional semiconductors face performance or cost limitations.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21,446.3 | ksi | — | ||
Shear Modulus(G) | 10,918.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.098 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.476 | eV/atom | — |