Mg4Sn2N4 is an experimental ternary nitride semiconductor composed of magnesium, tin, and nitrogen. This compound belongs to the emerging class of metal nitride semiconductors being investigated for optoelectronic and wide-bandgap device applications, where it offers potential advantages in thermal stability and chemical robustness compared to traditional III-V semiconductors. Research on this material family is driven by the need for semiconductors with improved performance in high-temperature, high-power, and UV-sensitive applications, though Mg4Sn2N4 remains primarily in the research phase rather than established production.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11,904.4 | ksi | — | ||
Shear Modulus(G) | 8,169.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.01170 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.5040 | eV/atom | — |