Mg4Sn2Ir2O12 is an experimental mixed-metal oxide semiconductor combining magnesium, tin, and iridium in a complex oxide lattice. This compound belongs to the family of multivalent metal oxides under active research for functional electronic and photonic applications; it is not a commercial material in widespread industrial use. The incorporation of iridium—a rare, high-performance transition metal—alongside tin and magnesium suggests potential use in advanced optoelectronic devices, catalysis, or high-temperature semiconductor applications where conventional oxides fall short, though specific performance advantages and synthesis routes remain primarily in the research domain.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.567 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.899 | eV/atom | — |