Mg4Sb8O16 is an inorganic oxide semiconductor compound containing magnesium and antimony. This material belongs to the mixed-metal oxide family and remains largely in the research and development phase, with potential applications in optoelectronic and thermoelectric device architectures where tunable bandgap and carrier mobility are of interest.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.727 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.938 | eV/atom | — |