Mg4O8 is a magnesium oxide-based ceramic compound that functions as a semiconductor, representing a material within the magnesium oxide family that exhibits altered electronic properties compared to conventional MgO. This composition is primarily investigated in research contexts for optoelectronic and photonic applications, where modified band gap and charge carrier behavior could enable new device functionalities. The material's potential applications leverage the inherent thermal stability and refractory characteristics of magnesium oxides while introducing semiconductive behavior absent in traditional ionic MgO.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 19,787.9 | ksi | — | ||
Shear Modulus(G) | 12,978 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.931 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.953 | eV/atom | — |