Mg₄O₈Tc₂ is an experimental mixed-metal oxide semiconductor containing magnesium and technetium in a defined stoichiometric phase. This compound belongs to the class of ternary oxide semiconductors and represents a research-stage material with potential applications in advanced electronic and catalytic systems. Limited industrial deployment exists at present; primary interest lies in fundamental materials science and exploratory device research, where the combination of earth-abundant magnesium with technetium's unique electronic properties may enable novel semiconductor architectures or functional oxides.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.03330 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.355 | eV/atom | — |