Mg₄Mn₄O₁₀ is a mixed-metal oxide semiconductor composed of magnesium and manganese in a complex spinel-related structure. This compound is primarily of research interest for energy storage, catalysis, and sensing applications, where the dual-metal composition enables tunable electronic properties and enhanced electrochemical activity compared to single-metal oxides. Industrial adoption remains limited, with most applications in laboratory-scale development for next-generation batteries, supercapacitors, and environmental remediation systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.00160 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -2.101 | eV/atom | — |