Mg₄Ge₄N₈ is a ternary nitride semiconductor compound combining magnesium, germanium, and nitrogen in a stoichiometric ratio. This material belongs to the emerging class of wide-bandgap semiconductors and mixed-metal nitrides, which are primarily of research interest for next-generation optoelectronic and power electronic device applications. The combination of a light metal (Mg) with a semiconductor element (Ge) in a nitride matrix creates a unique electronic structure with potential for UV-visible light emission, high-temperature stability, and enhanced thermal/electrical performance compared to conventional binary nitride semiconductors like GaN or AlN.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 150.7 | GPa | — | ||
Shear Modulus(G) | 85.97 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 2.854 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -0.7200 | eV/atom | — |