Mg₄Cu₄O₈ is a mixed-metal oxide semiconductor composed of magnesium and copper in a 1:1 cation ratio. This is a research-phase compound typically investigated for its potential in optoelectronic and photocatalytic applications, leveraging the semiconducting properties that emerge from the copper-oxygen and magnesium-oxygen bonding networks. The material represents an exploratory approach to designing cost-effective, earth-abundant alternatives to conventional semiconductors, though it remains largely in academic development rather than widespread industrial deployment.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.09680 | eV | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | -1.644 | eV/atom | — |